Published Power & Utilities Innovative Vertical Transistor The variable channel doping in vertical transistors, such as in a gradual channel doping SiC MOSFET, reduces Ron and increases BV of the transistors at the same time. By Antra Gajbhiye
Published Multi Sector Power Transistor Device A new FET design has resulted in a power device with low leakage capable of high frequency operation (>100 Khz). By University of Notre Dame
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