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Here we have a new set of semiconductor materials and structures, which enable the design of k-space charge-separation photodetectors with much improved photogenerated...
About
Explanation of Claimed Invention Here we have a new set of semiconductor materials and structures, which enable the design of k-space charge-separation photodetectors with much improved photogenerated-carrier lifetime and device performance. Problem Addressed by Claimed Invention Commercial off-the-shelf (COTS) IR photodetectors, traditionally, are designed based on the available materials (such as HgCdTe, Si, InGaAs, PbSe, etc.) with limited flexibility of band structures and other materials properties.
Key Benefits
• Maintains high absorption coefficient • Long photogenerated-carrier lifetime
Applications
• Long-Wave Photonic Devices • Communication Devices • Substrate Based Devices