Energy Efficient Switching

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Energy Efficient Switching In Magnetic Tunnel Junctions With An Antiferromagnetic Barrier Tech ID: UA19-138 Invention: This invention is a magnetic tunneling junction (MTJ) design to realize more efficient switching. This design includes the use of an antiferromagnetic layer. Background: Spintronics represents a promising solution to address the problem of greatly increased power consumption in CMOS transistors for memory and logic applications. Storing information as spin, instead of charge, spintronics offers a unique route to eliminate energy waste in the stand-by state. A large part of the present spintronics research focuses on reducing the dynamic power consumption and increasing the on/off ratio (magnetoresistance) in various structures. Magnetic tunnel junctions (MTJs) have been arguably the most important building blocks in spintronic technology. There is a need for advanced MTJs that dramatically reduce switching energy while maintaining a reasonably high tunneling magnetoresistance and strong thermal stability at room temperature.