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The advantage of this technology is that it presents the capacity to grow graphene on flat, large area surfaces.
About
This technology involves growing graphene sheets by the thermal decomposition of a SiC substrate heated to a temperature higher than 1000° C in an argon atmosphere. The evaporation of the silicon from the substrate results in epitaxial graphene typically with domain size no larger than 100 nm. The advantage of this technology is that it presents the capacity to grow graphene on flat, large area surfaces (up to 100 mm in diameter) on which devices can subsequently be frabicated using standard semiconductor processing techniques. A patent application is pending.