Memristive Devices and Arrays

About

Technology A new low power resistance random access memory (RRAM) device based on silicon materials has been invented. RRAM devices are non-volatile memory devices as well as promising candidates to replace FLASH memory and become the front runner among non-volatile memories. Instead of charge storage, RRAM uses high and low resistance as state variables. RRAM devices are attractive due to their fast switch speed, overwrite ability without erase, low power consumption, high endurance and long retention times. However, RRAM devices with low programming voltages and excellent device-to-device performance repeatability are still yet to be implemented. The current invention addresses these issues. Moreover, unlike other RRAM devices currently under development, these devices use only silicon-based materials making them compatible with CMOS technology. Altogether, these improvements make this new RRAM device an attractive option for commercial development.