Register for free to
view the full innovation profile.
Researchers in Stanford’s Nanoscale Prototyping Laboratory have developed a low-temperature process for fabricating etch-resistant, pinhole-free spacer dielectrics a few nanometers
About
Abstract: Researchers in Stanford’s Nanoscale Prototyping Laboratory have developed a low-temperature process for fabricating etch-resistant, pinhole-free spacer dielectrics a few nanometers thick. This technology uses plasma enhanced atomic layer deposition (PEALD) to create a silicon nitride (SiN)-aluminum nitride (AlN) composite layer that has insulating properties comparable to pure SiN. Previously, similar levels of etch rate and leakage current could only be achieved in films deposited at temperatures close to 800oC. This new PEALD process can be performed at