RF Switch Circuit

About

High-Power-Handling SiGe HBT Radio-Frequency Switch Highly integrated, low-cost circuits have fueled the growth of BiCMOS technology for Radio Frequency (RF) applications, and the integration of bandgap-engineered Silicon-Germanium (SiGe) technologies has greatly increased the performance of silicon-based RF integrated circuits. Radio Frequency switches are crucial for the operation of any radar or wireless transceiver. Unfortunately, conventional CMOS RF switching circuits have been unable to realize the benefits of SiGe-t heterojunction bipolar transistors (HBTs), limiting their dynamic range and high power-handling capability. Radio Frequency Switch from Commercially Available SiGe BiCMOS Technology This SiGe HBT-based radio frequency (RF) switch enables a wide variety of RF and millimeter-wave applications for which high power levels are necessary, including military radar, mobile phone, Wi-Fi and Wi-Max. The RF switch is made from commercially available silicon-germanium (SiGe) BiCMOS technology and is optimized for low insertion loss and high linearity applications. It can be integrated on a silicon chip for single-chip modules or used individually for a cost-effective, system-level solution for high-power-handling silicon RF switches. In addition, these SiGe BiCMOS RF switches perform optimally (minimize insertion loss, maximize the compression point, maximize the single event effect immunity, maximize isolation to minimize signal leakage, and maximize linearity) without any of the limited dynamic range or loss of high power handling experienced by CMOS-based RF switches.